2N5036

Type Designator: 2N5036

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 83 W

Maximum Collector-Base Voltage |Vcb|: 70 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 8 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 0.8 MHz

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: –

Package: TO131