Material of Transistor: Ge
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 18 V
Maximum Emitter-Base Voltage |Veb|: 20 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 85 °C
Transition Frequency (ft): 2 MHz
Collector Capacitance (Cc): 25 pF
نقد و بررسیها
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